INFLUENCE OF SOURCE NONSTOICHIOMETRY ON GROWTH OF CRYSTALLINE FILMS OF ZINC-SULFIDE ON SILICON IN ULTRAHIGH-VACUUM

被引：5

作者：

JONES, PL

ESSON, J

SINGER, KE

机构：

[1] UNIV MANCHESTER,DEPT ELECT ENGN,MANCHESTER M13 9PL,LANCASHIRE,ENGLAND

[2] UNIV MANCHESTER,DEPT GEOL,MANCHESTER M13 9PL,LANCASHIRE,ENGLAND

[3] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QD,ENGLAND

来源：

THIN SOLID FILMS | 1977年 / 43卷 / 03期

关键词：

D O I：

10.1016/0040-6090(77)90291-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：295 / 301

页数：7

共 7 条

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HILL, JS ;

SIMPSON, GN .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1973, 6 (03) :299-302

[2] REMOVAL OF OXIDE-FILMS FROM SILICON SURFACES IN A HIGH-VACUUM SYSTEM - INSITU ELLIPSOMETRIC STUDY [J].

HOPPER, MA ;

CLARKE, RA ;

YOUNG, L .

SURFACE SCIENCE, 1976, 56 (01) :472-481

[3] ELECTRO-OPTIC THIN-FILMS OF ZINC-SULFIDE [J].

JONES, PL ;

ALKHATEEB, KAH .

ELECTRONICS LETTERS, 1975, 11 (12) :262-263

[4] EPITAXIAL GROWTH OF ZINC SULPHIDE ON SILICON BY VACUUM EVAPORATION [J].

JONES, PL ;

LITTING, CNW ;

MASON, DE ;

WILLIAMS, VA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (03) :283-&

[5] OPTICAL WAVEGUIDING AND MODULATION IN ZINC-SULFIDE THIN-FILMS [J].

JONES, PL ;

ALKHATEEB, KAH .

ELECTRONICS LETTERS, 1976, 12 (08) :201-202

[6]

NORRISH K, 1976, PHYSICAL METHODS DET, P161

[7] EPITAXY OF ZINC SULPHIDE ON SILICON [J].

RAWLINS, TGR .

JOURNAL OF MATERIALS SCIENCE, 1970, 5 (10) :881-&

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