STUDY OF HALF-MICRON PHOTOLITHOGRAPHY BY MEANS OF CONTRAST ENHANCED LITHOGRAPHY PROCESS

被引：7

作者：

HIRAI, Y

SASAGO, M

ENDO, M

OGAWA, K

MANO, Y

ISHIHARA, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 01期

关键词：

D O I：

10.1116/1.583921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：434 / 438

页数：5

共 6 条

[1] CHARACTERIZATION OF POSITIVE PHOTORESIST [J].

DILL, FH ;

HORNBERGER, WP ;

HAUGE, PS ;

SHAW, JM .

[2]

ENDO E, 1986, 2ND SPSJ INT POL C, P167

[3]

Griffing B. F., 1983, ELECTRON DEVICE LETT, V4, P14

[4]

NIKI H, 1985, 17TH C SOL STAT DEV, P361

OLDHAM, WG ;

NANDGAONKAR, SN ;

NEUREUTHER, AR ;

OTOOLE, M .

[6]

Sasago M., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V631, P321, DOI 10.1117/12.963659