ELECTRONIC OPTICAL BISTABILITY IN A GAAS/ALGAAS STRIP-LOADED WAVE-GUIDE

被引：25

作者：

WARREN, M ^{[1
]}

GIBBONS, W ^{[1
]}

KOMATSU, K ^{[1
]}

SARID, D ^{[1
]}

HENDRICKS, D ^{[1
]}

GIBBS, HM ^{[1
]}

SUGIMOTO, M ^{[1
]}

机构：

[1] NEC CORP,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 16期

关键词：

D O I：

10.1063/1.99002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1209 / 1211

页数：3

共 12 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2]

GIBBS HM, 1982, APPL PHYS LETT, V41, P221, DOI 10.1063/1.93490

[3]

Gibbs HM, 1985, OPTICAL BISTABILITY

[4] STRIP-LOADED FILM WAVEGUIDE [J].

RAMASWAMY, V .

BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (04) :697-704

[5] REACTIVE ION ETCHING OF GAAS USING BCL3 [J].

SONEK, GJ ;

BALLANTYNE, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :653-657

[6] GAAS AND GAALAS REACTIVE ION ETCHING IN BCL3-CL2 MIXTURE [J].

TAMURA, H ;

KURIHARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09) :L731-L733

[7] USE OF A DIODE-LASER TO OBSERVE ROOM-TEMPERATURE, LOW-POWER OPTICAL BISTABILITY IN A GAAS-ALGAAS ETALON [J].

TARNG, SS ;

GIBBS, HM ;

JEWELL, JL ;

PEYGHAMBARIAN, N ;

GOSSARD, AC ;

VENKATESAN, T ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :360-361

[8] ALL-OPTICAL SWITCHING EFFECTS IN A PASSIVE GAAS/GAALAS MULTIPLE-QUANTUM-WELL WAVE-GUIDE RESONATOR [J].

WA, PLK ;

ROBSON, PN ;

DAVID, JPR ;

HILL, G ;

MISTRY, P ;

PATE, MA ;

ROBERTS, JS .

ELECTRONICS LETTERS, 1986, 22 (21) :1129-1130

[9]

WALKER AC, 1985, ELECTRON LETT, V21, P26

[10]

WARREN M, UNPUB

← 1 2 →