LOCAL VERSUS NONLOCAL CHARACTER OF THE ALKALI-PROMOTED OXIDATION OF SILICON

被引：6

作者：

CASTRO, GR

PERVAN, P

MICHEL, EG

MIRANDA, R

WANDELT, K

机构：

[1] CENT UNIV VENEZUELA, DEPT FIS, CARACAS, VENEZUELA

[2] UNIV ZAGREB, INST PHYS, YU-41001 Zagreb, YUGOSLAVIA

[3] UNIV AUTONOMA MADRID, DEPT FIS MAT CONDENSADA, MADRID 34, SPAIN

来源：

VACUUM | 1990年 / 41卷 / 4-6期

关键词：

D O I：

10.1016/0042-207X(90)93784-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoemission of Adsorbed Xenon (PAX) and low-temperature PhotoElectron Spectroscopy (PES) data for K-Si (100)2 × 1 strongly support the existence of an important local contribution to the observed oxidation enhancement. PAX spectra taken on the K-covered Si surface reveal a local work function decrease in the vicinity of the adsorbed alkali atoms in addition to a non-local decrease of the surface potential at the clean Si patches. During exposures to molecular oxygen, the alkali adatoms bond immediately to oxygen forming K-O complexes and/or potassium suboxides (depending on the K-coverage) which act as mediators in the Si oxidation. © 1990.

引用

页码：787 / 789

页数：3

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