LARGE-AREA HGTE-CDTE SUPERLATTICES AND HG1-XCDXTE MULTILAYERS ON GAAS AND SAPPHIRE SUBSTRATES GROWN BY LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:19
作者
PAIN, GN
BHARATULA, N
ELMS, TJ
GWYNN, P
KIBEL, M
KWIETNIAK, MS
LEECH, P
PETKOVIC, N
SANDFORD, C
THOMPSON, J
WARMINSKI, T
GAO, D
GLANVILL, SR
ROSSOUW, CJ
STEVENSON, AW
WILKINS, SW
WIELUNSKI, L
机构
[1] CSIRO,DIV MAT SCI & TECHNOL,CLAYTON,VIC 3168,AUSTRALIA
[2] CSIRO,DIV APPL PHYS,LUCAS HTS RES ESTAB,SUTHERLAND,NSW 2232,AUSTRALIA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 02期
关键词
D O I
10.1116/1.576963
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Specular HgTe-CdTe superlattice epilayers have been obtained on two 2-in. diam GaAs or sapphire wafers per growth run using a horizontal metalorganic chemical vapor deposition (MOCVD) reactor in which the pyrolysis of the organometallics is induced by a cracking susceptor suspended above the substrates. This enables growth of superlattices below 300 °C using the standard precursors dimethyl cadmium, diethyl telluride, and elemental mercury. Annealing the superlattices at 350 °C converts them to homogeneous Hg1-xCdxTe. Compositional profiles obtained by Rutherford backscattering, sputter Auger depth profiling, and e-beam analysis of ultramicrotomed thin cross sections, were used to study interdiffusion of the CdTe and HgTe layers during growth and annealing. Arrays of metal-semiconductor field effect transistors (MESFETS) and photoconductive detectors with room temperature peak responsivity between 1.3 and 1.6 μm have been prepared from incompletely interdiffused material grown on semi-insulating GaAs without thick buffer layers. Device processing used mesa technology and a KI:I2:HBr etchant developed for its selectivity with respect to Hg1-xCdxTe. Capping layers of CdTe and HgTe deposited at low temperatures have been investigated as dielectric and ohmic contacts, respectively. Electrical analyses by Hall and C-V measurements are presented. Room temperature electron mobilities up to 27 500 cm/Vs and resistivities of 1–2 Ωcm have been observed for the HgTe layers. Information on crystallinity and defect structure of the epilayers was obtained by selected area electron channeling patterns, high-resolution transmission electron microscopy (HRTEM), Rutherford backscattering spectroscopy (RBS) and four-circle, double-crystal, and triple-crystal x-ray diffraction. Compositional profiles in the 100 cm deposition area were obtained by wavelength dispersive x-ray analysis (WDX), Fourier transform infrared (FTIR) spectrometry and inductively coupled plasma atomic emission spectrometry (ICPAES). © 1990, American Vacuum Society. All rights reserved.
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页码:1067 / 1077
页数:11
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