THE EFFECT OF ANNEALING ON THE PROPERTIES OF SILICIDIZED MOLYBDENUM THIN-FILMS

被引：10

作者：

CHOW, TP ^{[1
]}

STECKL, AJ ^{[1
]}

BROWN, DM ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.328575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6331 / 6336

页数：6

共 13 条

[1] FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT [J].

BAGLIN, J ;

DEMPSEY, J ;

HAMMER, W ;

DHEURLE, F ;

PETERSSON, S ;

SERRANO, C .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) :641-661

[2]

BARTLETT RW, 1964, T METALL SOC AIME, V230, P1528

[3] REFRACTORY METAL SILICON DEVICE TECHNOLOGY [J].

BROWN, DM ;

ENGELER, WE ;

GARFINKEL, M ;

GRAY, PV .

SOLID-STATE ELECTRONICS, 1968, 11 (12) :1105-+

[4] SIZE EFFECTS IN MOSI2-GATE MOSFETS [J].

CHOW, TP ;

STECKL, AJ .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :297-299

[5] SILANE SILICIDATION OF MO THIN-FILMS [J].

CHOW, TP ;

BROWN, DM ;

STECKL, AJ ;

GARFINKEL, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5981-5985

[6] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

CROWDER, BL ;

ZIRINSKY, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J].

MOCHIZUKI, T ;

SHIBATA, K ;

INOUE, T ;

OHUCHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :37-42

[8] COSPUTTERED MOLYBDENUM SILICIDES ON THERMAL SIO2 [J].

MURARKA, SP ;

FRASER, DB ;

RETAJCZYK, TF ;

SHENG, TT .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5380-5385

[9]

MURARKA SP, 1979, IEDM, P454

[10]

SAMSONOV GV, 1959, SILICIDES THEIR USES

← 1 2 →