WANNIER-STARK LOCALIZATION IN SUPERLATTICES

被引：11

作者：

HAMAGUCHI, C

YAMAGUCHI, M

NAGASAWA, H

MORIFUJI, M

DICARLO, A

VOGL, P

BOHM, G

TRANKLE, G

WEIMANN, G

NISHIKAWA, Y

MUTO, S

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY

[2] FUJITSU LABS LTD,ATSUGI,KANAGAWA 24301,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 8B期

关键词：

ZENER TUNNELING; WANNIER-STARK OSCILLATION; P-I-N SEMICONDUCTOR DIODE; SUPERLATTICE; TRANSPORT;

D O I：

10.1143/JJAP.34.4519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present experimental and theoretical evidence for Wannier-Stark (WS) oscillations in the DC electric current through reverse-biased highly doped p-i-n GaAs diodes. The intrinsic region in the diode contained seven (GaAs)(5)/(AlAs)(2) multi-quantum wells. Carrying out these transport experiments at low temperatures, we found periodic WS oscillations in the second derivative of the Zener current, which is in qualitative agreement with theoretical predictions based on a realistic multiband and multichannel scattering theory. These findings resolve long-standing controversies about the existence of Wannier-Stark levels in the Zener tunneling current.

引用

页码：4519 / 4521

页数：3

共 13 条

[11] STARK-LADDER TRANSITION IN A TYPE-II (GAAS)8/(ALAS)8 SUPERLATTICE [J].

YAMAGUCHI, M ;

NAGASAWA, H ;

MROFUJI, M ;

TANIGUCHI, K ;

YAMAGUCHI, C ;

GMACHL, C ;

GORNIK, E .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (10) :1810-1814

[12] STARK-LADDER TRANSITIONS IN GAAS/ALGAAS SUPERLATTICES [J].

YAMAGUCHI, M ;

MORIFUJI, M ;

KUBO, H ;

TANIGUCHI, K ;

HAMAGUCHI, C ;

GMACHL, C ;

GORNIK, E .

SOLID-STATE ELECTRONICS, 1994, 37 (4-6) :839-842

[13] COMMENT ON THE EXISTENCE PROOFS OF THE WANNIER-STARK LADDER [J].

ZAK, J .

PHYSICAL REVIEW B, 1991, 43 (05) :4519-4520

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