ACHIEVEMENT OF LOW-RESISTIVITY P-TYPE ZNSE AND THE ROLE OF TWINNING

被引：26

作者：

NEUMARK, GF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.343198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4859 / 4862

页数：4

共 44 条

[1] THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS [J].

BHARGAVA, RN .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :15-26

[2]

CASEY HC, 1975, POINT DEFECTS SOLIDS, V2, P163

[3] GROWTH OF P-TYPE ZNSE-LI BY MOLECULAR-BEAM EPITAXY [J].

CHENG, H ;

DEPUYDT, JM ;

POTTS, JE ;

SMITH, TL .

APPLIED PHYSICS LETTERS, 1988, 52 (02) :147-149

[4] UNIVERSALITY ASPECTS OF METAL-NONMETAL TRANSITION IN CONDENSED MEDIA [J].

EDWARDS, PP ;

SIENKO, MJ .

PHYSICAL REVIEW B, 1978, 17 (06) :2575-2581

[5] STRUCTURAL DEFECTS AND P-TYPE CONDUCTIVITY IN ZNSE [J].

FITZPATRICK, B ;

NEUMARK, G ;

BHARGAVA, R ;

VERMAAK, J .

PHYSICA B & C, 1983, 116 (1-3) :487-491

[6]

FITZPATRICK BL, UNPUB

[7]

FRITZSCHE H, 1978, METAL NONMETAL TRANS, P193

[8] EMISSIONS RELATED TO DONOR-BOUND EXCITONS IN HIGHLY PURIFIED ZINC SELENIDE SINGLE-CRYSTALS [J].

ISSHIKI, M ;

KYOTANI, T ;

MASUMOTO, K ;

UCHIDA, W ;

SUTO, S .

PHYSICAL REVIEW B, 1987, 36 (05) :2568-2577

[9] THE CHANGE IN THE PHOTOLUMINESCENCE SPECTRA OF CU-DOPED ZNSE SINGLE-CRYSTALS CAUSED BY HEAT-TREATMENT [J].

ISSHIKI, M ;

MASUMOTO, K .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (14) :2771-2777

[10] ELECTRICAL-PROPERTIES OF ZINC SELENIDE [J].

JONES, G ;

WOODS, J .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (05) :799-810

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