ANNEALING STUDIES OF VACANCIES IN PROTON IRRADIATED SILICON

被引：11

作者：

DANNEFAER, S

MASCHER, P

KERR, D

机构：

[1] Department of Physics, University of Winnipeg, Winnipeg

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.352905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Annealing of vacancies produced by heavy proton irradiation of float-zone (Fz) and P-doped Czochralski-grown (Cz) silicon has been investigated by positron lifetime spectroscopy. In Fz-Si divacancies are retained after irradiation, and these defects are completely annealed out at 700-degrees-C. In Cz P-doped silicon, impurities are found to enhance both the amount of retained vacancies as well as the tendency for vacancy clustering. Two annealing stages appear at 100-degrees-C and close to 450-degrees-C which seem to be a result of interstitial migration. Vacancy migration takes place in a wide temperature range between 100 and 1000-degrees-C.

引用

页码：3740 / 3743

页数：4

共 18 条

[1]

ANTONOVA IV, 1989, SOV PHYS SEMICOND+, V23, P671

[2]

BOTVIN VA, 1973, SOV PHYS SEMICOND+, V6, P1453

[3] NEW EPR SPECTRA IN IRRADIATED SILICON [J].