SEMIEMPIRICAL FORMALISM FOR THE CALCULATION OF DEEP-LEVEL WAVE-FUNCTIONS IN K-SPACE

被引:9
作者
DAI, HH
GUNDERSEN, MA
MYLES, CW
机构
[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089
[2] TEXAS TECH UNIV,DEPT PHYS & ENGN PHYS,LUBBOCK,TX 79409
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 12期
关键词
D O I
10.1103/PhysRevB.33.8234
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:8234 / 8237
页数:4
相关论文
共 34 条
[1]   SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895
[2]   SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899
[3]  
BERNHOLC J, 1982, PHYS REV B, V26, P5702
[4]  
DAI HX, UNPUB
[5]   STUDY OF THE IDEAL-VACANCY-INDUCED NEUTRAL DEEP LEVELS IN III-V COMPOUND SEMICONDUCTORS AND THEIR TERNARY ALLOYS [J].
DASSARMA, S ;
MADHUKAR, A .
PHYSICAL REVIEW B, 1981, 24 (04) :2051-2068
[6]   EFFECTS OF THE ENVIRONMENT ON POINT-DEFECT ENERGY-LEVELS IN SEMICONDUCTORS [J].
DOW, JD ;
ALLEN, RE ;
SANKEY, OF ;
BUISSON, JP ;
HJALMARSON, HP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :502-507
[7]   TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J].
FAULKNER, RA .
PHYSICAL REVIEW, 1968, 175 (03) :991-&
[8]   THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J].
HJALMARSON, HP ;
VOGL, P ;
WOLFORD, DJ ;
DOW, JD .
PHYSICAL REVIEW LETTERS, 1980, 44 (12) :810-813
[9]  
HJALMARSON HP, 1979, THESIS U ILLINOIS UR
[10]   INTERFERENCE BETWEEN INTERMEDIATE STATES IN OPTICAL PROPERTIES OF NITROGEN-DOPED GALLIUM PHOSPHIDE [J].
HOPFIELD, JJ ;
DEAN, PJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1967, 158 (03) :748-&