THE EFFECTS OF ION-IMPLANTATION ON THE ELECTRICAL AND COMPOSITIONAL PROPERTIES OF TIN OXIDE THIN-FILMS

被引：9

作者：

STEDILE, FC

LEITE, CVB

SCHREINER, WH

BAUMVOL, IJR

机构：

[1] Instituto de Físíca, Universidade Federal do Rio Grande do Sul, 91500 Porto Alegre, RS

来源：

THIN SOLID FILMS | 1990年 / 190卷 / 01期

关键词：

D O I：

10.1016/0040-6090(90)90135-Z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin oxide thin films obtained by reactive sputtering were submitted to different thermal annealings and then implanted with Fe+, Cu+, Zn+, Ga+ or As+. Subsequent air annealing was performed after implantation. The system was characterized by sheet resistance measurements, Rutherford backscattering spectroscopy and nuclear resonant scattering. The sheet resistance measurements showed that the doping of the films in general leads to an increase in the electrical conductivity. From the Rutherford backscattering spectroscopy and nuclear resonant scattering analyses, correlations between the depth distribution of the implanted species and the oxygen-to-tin ratios as a function of depth were also found. © 1990.

引用

页码：139 / 151

页数：13

共 16 条

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