DEFECTS CREATED BY SWIFT IONS IN GERMANIUM

被引：3

作者：

MARIE, P ^{[1
]}

LEVALOIS, M ^{[1
]}

GIRARD, JP ^{[1
]}

ALLAIS, G ^{[1
]}

JULIENNE, D ^{[1
]}

PAUMIER, E ^{[1
]}

机构：

[1] CIRIL,F-14040 CAEN,FRANCE

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1993年 / 126卷 / 1-4期

关键词：

D O I：

10.1080/10420159308219724

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

[No abstract available]

引用

页码：271 / 274

页数：4

共 6 条

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[2] HIGH-ENERGY ION IRRADIATION OF GERMANIUM [J].

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GIRARD, JP ;

ALLAIS, G ;

HAIRIE, A ;

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[3] INDUCED DAMAGE BY HIGH-ENERGY HEAVY-ION IRRADIATION AT THE GANIL ACCELERATOR IN SEMICONDUCTOR-MATERIALS [J].

LEVALOIS, M ;

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 63 (1-2) :14-20

[4] DEFECTS CREATED BY 3.5 GEV XENON IONS IN SILICON [J].

MARY, P ;

BOGDANSKI, P ;

NOUET, G ;

TOULEMONDE, M .

APPLIED SURFACE SCIENCE, 1989, 43 :102-105

[5] THRESHOLD ENERGY FOR ATOMIC DISPLACEMENT IN ELECTRON-IRRADIATED GERMANIUM [J].

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REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (01) :15-19

[6]

Van de Pauw L.J., 1958, PHILIPS RES REP, V13, P1

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