DEFECTS CREATED BY 3.5 GEV XENON IONS IN SILICON

被引：13

作者：

MARY, P ^{[1
]}

BOGDANSKI, P ^{[1
]}

NOUET, G ^{[1
]}

TOULEMONDE, M ^{[1
]}

机构：

[1] CTR INDISCIPLINAIRE RECH IONS LOURDS,F-14040 CAEN,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1989年 / 43卷

关键词：

D O I：

10.1016/0169-4332(89)90197-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：102 / 105

页数：4

共 19 条

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