INVESTIGATION OF DEEP DEFECTS DUE TO ALPHA-PARTICLE IRRADIATION IN N-SILICON

被引：15

作者：

INDUSEKHAR, H ^{[1
]}

KUMAR, V ^{[1
]}

SENGUPTA, D ^{[1
]}

机构：

[1] INDIAN INST SCI,MAT RES LAB,BANGALORE 560012,KARNATAKA,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 93卷 / 02期

关键词：

ELECTRIC PROPERTIES - HEAT TREATMENT - Annealing - SPECTROSCOPY;

D O I：

10.1002/pssa.2210930230

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical properties of defects induced by alpha -particles of about 10 Mev energy at a dose of 10**1**4 and 10**1**5 cm** minus **2 were studied by DLTS. The levels at E//c-0. 18 ev, E//c-0. 26 ev, and E//c-0. 48 ev are identified as A center, v//2 ( equals / minus ) and v//2 ( minus /0) on the basis of activation energy, electron capture cross section, and annealing behavior. Two other irradaition related levels at E//c-0. 28 ev and E//c-0. 51 ev could not be related to any known center.

引用

页码：645 / 653

页数：9

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