PHOTO-DEEP LEVEL TRANSIENT SPECTROSCOPY - A TECHNIQUE TO STUDY DEEP LEVELS IN HEAVILY COMPENSATED SEMICONDUCTORS

被引：44

作者：

MOONEY, PM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.331743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：208 / 213

页数：6

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