TRANSIENT CAPACITANCE STUDY OF RADIATION-INDUCED DEFECTS IN ALUMINUM-DOPED SILICON

被引：24

作者：

LEE, YH

WANG, KL

JAWOROWSKI, A

MOONEY, PM

CHENG, LJ

CORBETT, JW

机构：

[1] SUNY ALBANY,INST STUDY DEFECTS SOLIDS,DEPT PHYS,ALBANY,NY 12222

[2] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 57卷 / 02期

关键词：

D O I：

10.1002/pssa.2210570228

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：697 / 704

页数：8

共 16 条

[1]

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[2]

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[3]

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[5] EPR STUDIES OF DEFECTS IN ELECTRON-IRRADIATED SILICON - TRIPLET-STATE OF VACANCY-OXYGEN COMPLEXES [J].

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[8] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

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[9] DEFECT ENERGY-LEVELS IN BORON-DOPED SILICON IRRADIATED WITH 1-MEV ELECTRONS [J].

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[10] RECOMBINATION-ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J].

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