OHMIC CONTACTS TO GAAS BY A SIMPLE LOW TEMPERATURE ALLOYING PROCESS

被引：14

作者：

JADUS, DK

REEDY, HE

FEUCHT, DL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 04期

关键词：

D O I：

10.1149/1.2426609

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：408 / &

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DALE, JR
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[2] SIMPLE OHMIC CONTACTS ON GALLIUM ARSENIDE
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[4] EVAPORATED OHMIC CONTACTS ON GAAS
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[5] LOW-TEMPERATURE ALLOY CONTACTS TO GALLIUM ARSENIDE USING METAL HALIDE FLUXES
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