EVAPORATED OHMIC CONTACTS ON GAAS

被引:10
作者
SCHMIDT, WA
机构
关键词
D O I
10.1149/1.2424137
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:860 / &
相关论文
共 4 条
[1]   SIMPLE OHMIC CONTACTS ON GALLIUM ARSENIDE [J].
DALE, JR ;
TURNER, RG .
SOLID-STATE ELECTRONICS, 1963, 6 (04) :388-&
[2]   EFFECT OF TEMPERATURE ON THE STIMULATED EMISSION FROM GAAS P-N JUNCTIONS [J].
PILKUHN, M ;
RUPPRECHT, H ;
BLUM, S .
SOLID-STATE ELECTRONICS, 1964, 7 (12) :905-909
[3]  
PROEBSTING R, 1964, SEMICONDUCTOR PRODUC, V7, P33
[4]   PROPERTIES OF GAAS ALLOY DIODES [J].
REDIKER, RH ;
QUIST, TM .
SOLID-STATE ELECTRONICS, 1963, 6 (06) :657-665