OXIDATION OF SI IMPLANTED WITH NONDOPANT, METALLIC-IONS

[1] MONTE CARLO CHANNELING CALCULATIONS [J]. PHYSICAL REVIEW B, 1971, 3 (05): : 1527 - &

[2] BOLDYREV VP, 1977, FIZ TEKH POLUPROV, V11, P1199

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] THERMAL OXIDATION OF HEAVILY DOPED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) : 430 - +

[5] Fathy D., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V797, P83, DOI 10.1117/12.941029

[6] FORMATION OF EPITAXIAL LAYERS OF GE ON SI SUBSTRATES BY GE IMPLANTATION AND OXIDATION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1337 - 1339

[7] DOPANT DEPENDENCE OF THE OXIDATION RATE OF ION-IMPLANTED SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 203 - 209

[8] SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .1. THEORY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1516 - 1522

[9] NOVEL OXIDATION PROCESS IN GE+-IMPLANTED SI AND ITS EFFECT ON OXIDATION-KINETICS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 520 - 522

[10] Lindhard J., 1965, KGL DANSKE VIDENSKAB, V34

[1] MONTE CARLO CHANNELING CALCULATIONS [J]. PHYSICAL REVIEW B, 1971, 3 (05): : 1527 - &

[2] BOLDYREV VP, 1977, FIZ TEKH POLUPROV, V11, P1199

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] THERMAL OXIDATION OF HEAVILY DOPED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) : 430 - +

[5] Fathy D., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V797, P83, DOI 10.1117/12.941029

[6] FORMATION OF EPITAXIAL LAYERS OF GE ON SI SUBSTRATES BY GE IMPLANTATION AND OXIDATION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1337 - 1339

[7] DOPANT DEPENDENCE OF THE OXIDATION RATE OF ION-IMPLANTED SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 203 - 209

[8] SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .1. THEORY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1516 - 1522

[9] NOVEL OXIDATION PROCESS IN GE+-IMPLANTED SI AND ITS EFFECT ON OXIDATION-KINETICS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 520 - 522

[10] Lindhard J., 1965, KGL DANSKE VIDENSKAB, V34