EARLY STAGES OF CU GROWTH ON BORON SEGREGATED SI(111) SURFACES - A SCANNING-TUNNELING-MICROSCOPY STUDY

被引：6

作者：

ROGE, TP

THIBAUDAU, F

MATHIEZ, P

DUMAS, P

SALVAN, F

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1116/1.587699

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Out segregation of boron from the bulk of highly doped Si samples leads to surfaces which present a B-Si(111)square-root 3 X square-root 3 R(30-degrees) reconstruction (hereafter abbreviated B square-root 3). Scanning tunneling microscopy investigations show that, depending on the annealing temperatures, different boron equilibrium surface concentrations are obtained in the B square-root 3 substrates. Comparisons of Cu growth on such substrates show that copper nucleation is highly correlated to the density of dangling bonds at the surface.

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页码：2040 / 2043

页数：4

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