COOPERATIVE SEGREGATION OF BORON AT SI(111)

被引：22

作者：

THIBAUDAU, F

ROGE, TP

MATHIEZ, P

DUMAS, P

SALVAN, F

机构：

[1] Groupe de Physique des Etats Condensés, URA CNRS 783, Département de Physique, Marseille Cedex 9, 13288

来源：

EUROPHYSICS LETTERS | 1994年 / 25卷 / 05期

关键词：

D O I：

10.1209/0295-5075/25/5/007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Interface segregation of boron at Si(111) surfaces has been studied at the atomic scale using a scanning tunnelling microscope (STM). During the segregation process (produced by thermal annealing), strong cooperative effects take place which cannot be explained by a simple nearest-neighbour pair interaction model. Although average surface concentrations of boron in the investigated temperature range could be calculated in terms of a Fowler's model, the comparison between STM and simulated images suggests that one must introduce longer-range interactions to describe the atomic-scale configurations.

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页码：353 / 356

页数：4

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