ATOMIC-STRUCTURE OF SI(111) (SQUARE-ROOT-3XSQUARE-ROOT-3) R30-DEGREES-B BY DYNAMIC LOW-ENERGY ELECTRON-DIFFRACTION

被引：67

作者：

HUANG, H

TONG, SY

QUINN, J

JONA, F

机构：

[1] UNIV WISCONSIN,SURFACE STUDIES LAB,MILWAUKEE,WI 53201

[2] SUNY STONY BROOK,DEPT MAT SCI,STONY BROOK,NY 11794

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.41.3276

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The geometric structure of Si(111) (3»×3») R30°-B formed by annealing highly doped Si(111) samples was determined by low-energy electron diffraction. The optimal structure has the B atom occupying a substitutional B5 site, different from adatom sites occupied by other group-III metals. Three-dimensional atomic coordinates and surface bond lengths have been determined. With B at the B5 site, the compressive stress between Si and B atoms disappeared in the near surface region. The difference between an all Si 3 reconstruction structure stabilized by B doping with another structure observed by Ag doping is discussed. © 1990 The American Physical Society.

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页码：3276 / 3279

页数：4

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