ADATOM REGISTRY ON SI(111)-(SQUARE-ROOT-3XSQUARE-ROOT-3)R 30-DEGREES-B

被引：22

作者：

BEDROSSIAN, P ^{[1
]}

MORTENSEN, K ^{[1
]}

CHEN, DM ^{[1
]}

GOLOVCHENKO, JA ^{[1
]}

机构：

[1] ROWLAND INST SCI INC, CAMBRIDGE, MA 02142 USA

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.41.7545

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used tunneling microscopy to determine the binding site of adatoms on Si(111)-(s3 × s3) R30°stabilized by surface boron doping. The adatoms are found to occupy the T4 binding site, regardless of either the local dopant concentration or the presence or absence of a substitutional boron atom directly underneath individual adatoms. © 1990 The American Physical Society.

引用

页码：7545 / 7548

页数：4

共 22 条

[1] SURFACE DOPING AND STABILIZATION OF SI(111) WITH BORON
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[7] ATOMIC-STRUCTURE OF SI(111) (SQUARE-ROOT-3XSQUARE-ROOT-3) R30-DEGREES-B BY DYNAMIC LOW-ENERGY ELECTRON-DIFFRACTION
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[8] GEOMETRIC STRUCTURE OF THE SI(111)SQUARE-ROOT-3SQUARE-ROOT-3-GA SURFACE
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[J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2704 - 2706
[9] ELECTRONIC STATES DUE TO SURFACE DOPING - SI(111)-SQUARE-ROOT-3X-SQUARE-ROOT-3B
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[J]. PHYSICAL REVIEW B, 1990, 41 (02): : 1262 - 1265
[10] FORMATION OF SI(111)SQUARE-ROOT-3 X SQUARE-ROOT-3-B AND SI EPITAXY ON SI(111)SQUARE-ROOT-3 X SQUARE-ROOT-3-B - LEED AES STUDY
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