ELECTRONIC STATES DUE TO SURFACE DOPING - SI(111)-SQUARE-ROOT-3X-SQUARE-ROOT-3B

被引：102

作者：

KAXIRAS, E

PANDEY, KC

HIMPSEL, FJ

TROMP, RM

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.41.1262

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A 3 × 3 surface reconstruction is obtained on Si(111) when B diffuses from the bulk to the surface in heavily doped Si samples. First-principles total-energy calculations show that the lowest-energy atomic configuration for this reconstruction consists of a B atom at a subsurface substitutional site, directly underneath a Si adatom. Surface electronic states observed by photoemission and inverse photoemission experiments are analyzed through electronic structure calculations and shown to be related to the back-bond and the dangling-bond states of the Si adatom. © 1990 The American Physical Society.

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页码：1262 / 1265

页数：4

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