TEMPERATURE STABILITY OF ALXGA1-XAS (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1) THERMAL OXIDE MASKS FOR SELECTIVE-AREA EPITAXY

被引:5
作者
JONES, SH [1 ]
LAU, KM [1 ]
POUCH, JJ [1 ]
机构
[1] NASA,LEWIS RES CTR,CLEVELAND,OH 44135
关键词
D O I
10.1063/1.341894
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:922 / 925
页数:4
相关论文
共 12 条
[1]   PSEUDOMORPHIC GAAS/INGAAS SINGLE QUANTUM WELLS BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].
BERTOLET, DC ;
HSU, JK ;
JONES, SH ;
KEI, ML .
APPLIED PHYSICS LETTERS, 1988, 52 (04) :293-295
[2]   GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY [J].
DENBAARS, SP ;
BEYLER, CA ;
HARIZ, A ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1987, 51 (19) :1530-1532
[3]  
IIDA S, 1972, J CRYST GROWTH, V13, P336
[4]   SELECTIVE AREA GROWTH OF HIGH-QUALITY GAAS BY OMCVD USING NATIVE OXIDE MASKS [J].
JONES, SH ;
LAU, KM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (12) :3149-3155
[5]   SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE [J].
KAMON, K ;
TAKAGISHI, S ;
MORI, H .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) :73-76
[6]   GAAS INTEGRATED-CIRCUITS BY SELECTED-AREA MOLECULAR-BEAM EPITAXY [J].
METZE, GM ;
LEVY, HM ;
WOODARD, DW ;
WOOD, CEC ;
EASTMAN, LF .
APPLIED PHYSICS LETTERS, 1980, 37 (07) :628-630
[7]   SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR GAAS PLANAR TECHNOLOGY [J].
NAKAI, K ;
OZEKI, M .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :200-205
[8]   AUGER ANALYSIS OF THERMALLY OXIDIZED GAAS SURFACES [J].
SHIOTA, I ;
MIYAMOTO, N ;
NISHIZAWA, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1405-1409
[9]   MEASUREMENT OF GAAS SURFACE OXIDE DESORPTION TEMPERATURES [J].
SPRINGTHORPE, AJ ;
INGREY, SJ ;
EMMERSTORFER, B ;
MANDEVILLE, P ;
MOORE, WT .
APPLIED PHYSICS LETTERS, 1987, 50 (02) :77-79
[10]   SELECTIVE MOCVD GROWTH OF GAALAS ON PARTLY MASKED SUBSTRATES AND ITS APPLICATION TO OPTOELECTRONIC DEVICES [J].
TAKAHASHI, Y ;
SAKAI, S ;
UMENO, M .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :206-213