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TEMPERATURE STABILITY OF ALXGA1-XAS (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1) THERMAL OXIDE MASKS FOR SELECTIVE-AREA EPITAXY
被引:5
作者
:
JONES, SH
论文数:
0
引用数:
0
h-index:
0
机构:
NASA,LEWIS RES CTR,CLEVELAND,OH 44135
NASA,LEWIS RES CTR,CLEVELAND,OH 44135
JONES, SH
[
1
]
LAU, KM
论文数:
0
引用数:
0
h-index:
0
机构:
NASA,LEWIS RES CTR,CLEVELAND,OH 44135
NASA,LEWIS RES CTR,CLEVELAND,OH 44135
LAU, KM
[
1
]
POUCH, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
NASA,LEWIS RES CTR,CLEVELAND,OH 44135
NASA,LEWIS RES CTR,CLEVELAND,OH 44135
POUCH, JJ
[
1
]
机构
:
[1]
NASA,LEWIS RES CTR,CLEVELAND,OH 44135
来源
:
JOURNAL OF APPLIED PHYSICS
|
1988年
/ 64卷
/ 02期
关键词
:
D O I
:
10.1063/1.341894
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:922 / 925
页数:4
相关论文
共 12 条
[1]
PSEUDOMORPHIC GAAS/INGAAS SINGLE QUANTUM WELLS BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
[J].
BERTOLET, DC
论文数:
0
引用数:
0
h-index:
0
BERTOLET, DC
;
HSU, JK
论文数:
0
引用数:
0
h-index:
0
HSU, JK
;
JONES, SH
论文数:
0
引用数:
0
h-index:
0
JONES, SH
;
KEI, ML
论文数:
0
引用数:
0
h-index:
0
KEI, ML
.
APPLIED PHYSICS LETTERS,
1988,
52
(04)
:293
-295
[2]
GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY
[J].
DENBAARS, SP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
DENBAARS, SP
;
BEYLER, CA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
BEYLER, CA
;
HARIZ, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
HARIZ, A
;
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
DAPKUS, PD
.
APPLIED PHYSICS LETTERS,
1987,
51
(19)
:1530
-1532
[3]
IIDA S, 1972, J CRYST GROWTH, V13, P336
[4]
SELECTIVE AREA GROWTH OF HIGH-QUALITY GAAS BY OMCVD USING NATIVE OXIDE MASKS
[J].
JONES, SH
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Massachusetts, Amherst, MA,, USA, Univ of Massachusetts, Amherst, MA, USA
JONES, SH
;
LAU, KM
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Massachusetts, Amherst, MA,, USA, Univ of Massachusetts, Amherst, MA, USA
LAU, KM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1987,
134
(12)
:3149
-3155
[5]
SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE
[J].
KAMON, K
论文数:
0
引用数:
0
h-index:
0
KAMON, K
;
TAKAGISHI, S
论文数:
0
引用数:
0
h-index:
0
TAKAGISHI, S
;
MORI, H
论文数:
0
引用数:
0
h-index:
0
MORI, H
.
JOURNAL OF CRYSTAL GROWTH,
1985,
73
(01)
:73
-76
[6]
GAAS INTEGRATED-CIRCUITS BY SELECTED-AREA MOLECULAR-BEAM EPITAXY
[J].
METZE, GM
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
METZE, GM
;
LEVY, HM
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
LEVY, HM
;
WOODARD, DW
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
WOODARD, DW
;
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
WOOD, CEC
;
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
EASTMAN, LF
.
APPLIED PHYSICS LETTERS,
1980,
37
(07)
:628
-630
[7]
SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR GAAS PLANAR TECHNOLOGY
[J].
NAKAI, K
论文数:
0
引用数:
0
h-index:
0
NAKAI, K
;
OZEKI, M
论文数:
0
引用数:
0
h-index:
0
OZEKI, M
.
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
:200
-205
[8]
AUGER ANALYSIS OF THERMALLY OXIDIZED GAAS SURFACES
[J].
SHIOTA, I
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
SHIOTA, I
;
MIYAMOTO, N
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
MIYAMOTO, N
;
NISHIZAWA, J
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
NISHIZAWA, J
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(09)
:1405
-1409
[9]
MEASUREMENT OF GAAS SURFACE OXIDE DESORPTION TEMPERATURES
[J].
SPRINGTHORPE, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
SPRINGTHORPE, AJ
;
INGREY, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
INGREY, SJ
;
EMMERSTORFER, B
论文数:
0
引用数:
0
h-index:
0
机构:
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
EMMERSTORFER, B
;
MANDEVILLE, P
论文数:
0
引用数:
0
h-index:
0
机构:
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
MANDEVILLE, P
;
MOORE, WT
论文数:
0
引用数:
0
h-index:
0
机构:
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
MOORE, WT
.
APPLIED PHYSICS LETTERS,
1987,
50
(02)
:77
-79
[10]
SELECTIVE MOCVD GROWTH OF GAALAS ON PARTLY MASKED SUBSTRATES AND ITS APPLICATION TO OPTOELECTRONIC DEVICES
[J].
TAKAHASHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
TAKAHASHI, Y
;
SAKAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
SAKAI, S
;
UMENO, M
论文数:
0
引用数:
0
h-index:
0
机构:
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
UMENO, M
.
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
:206
-213
←
1
2
→
共 12 条
[1]
PSEUDOMORPHIC GAAS/INGAAS SINGLE QUANTUM WELLS BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
[J].
BERTOLET, DC
论文数:
0
引用数:
0
h-index:
0
BERTOLET, DC
;
HSU, JK
论文数:
0
引用数:
0
h-index:
0
HSU, JK
;
JONES, SH
论文数:
0
引用数:
0
h-index:
0
JONES, SH
;
KEI, ML
论文数:
0
引用数:
0
h-index:
0
KEI, ML
.
APPLIED PHYSICS LETTERS,
1988,
52
(04)
:293
-295
[2]
GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY
[J].
DENBAARS, SP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
DENBAARS, SP
;
BEYLER, CA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
BEYLER, CA
;
HARIZ, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
HARIZ, A
;
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
DAPKUS, PD
.
APPLIED PHYSICS LETTERS,
1987,
51
(19)
:1530
-1532
[3]
IIDA S, 1972, J CRYST GROWTH, V13, P336
[4]
SELECTIVE AREA GROWTH OF HIGH-QUALITY GAAS BY OMCVD USING NATIVE OXIDE MASKS
[J].
JONES, SH
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Massachusetts, Amherst, MA,, USA, Univ of Massachusetts, Amherst, MA, USA
JONES, SH
;
LAU, KM
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Massachusetts, Amherst, MA,, USA, Univ of Massachusetts, Amherst, MA, USA
LAU, KM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1987,
134
(12)
:3149
-3155
[5]
SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE
[J].
KAMON, K
论文数:
0
引用数:
0
h-index:
0
KAMON, K
;
TAKAGISHI, S
论文数:
0
引用数:
0
h-index:
0
TAKAGISHI, S
;
MORI, H
论文数:
0
引用数:
0
h-index:
0
MORI, H
.
JOURNAL OF CRYSTAL GROWTH,
1985,
73
(01)
:73
-76
[6]
GAAS INTEGRATED-CIRCUITS BY SELECTED-AREA MOLECULAR-BEAM EPITAXY
[J].
METZE, GM
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
METZE, GM
;
LEVY, HM
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
LEVY, HM
;
WOODARD, DW
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
WOODARD, DW
;
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
WOOD, CEC
;
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
EASTMAN, LF
.
APPLIED PHYSICS LETTERS,
1980,
37
(07)
:628
-630
[7]
SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR GAAS PLANAR TECHNOLOGY
[J].
NAKAI, K
论文数:
0
引用数:
0
h-index:
0
NAKAI, K
;
OZEKI, M
论文数:
0
引用数:
0
h-index:
0
OZEKI, M
.
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
:200
-205
[8]
AUGER ANALYSIS OF THERMALLY OXIDIZED GAAS SURFACES
[J].
SHIOTA, I
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
SHIOTA, I
;
MIYAMOTO, N
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
MIYAMOTO, N
;
NISHIZAWA, J
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
NISHIZAWA, J
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(09)
:1405
-1409
[9]
MEASUREMENT OF GAAS SURFACE OXIDE DESORPTION TEMPERATURES
[J].
SPRINGTHORPE, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
SPRINGTHORPE, AJ
;
INGREY, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
INGREY, SJ
;
EMMERSTORFER, B
论文数:
0
引用数:
0
h-index:
0
机构:
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
EMMERSTORFER, B
;
MANDEVILLE, P
论文数:
0
引用数:
0
h-index:
0
机构:
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
MANDEVILLE, P
;
MOORE, WT
论文数:
0
引用数:
0
h-index:
0
机构:
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
MOORE, WT
.
APPLIED PHYSICS LETTERS,
1987,
50
(02)
:77
-79
[10]
SELECTIVE MOCVD GROWTH OF GAALAS ON PARTLY MASKED SUBSTRATES AND ITS APPLICATION TO OPTOELECTRONIC DEVICES
[J].
TAKAHASHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
TAKAHASHI, Y
;
SAKAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
SAKAI, S
;
UMENO, M
论文数:
0
引用数:
0
h-index:
0
机构:
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
UMENO, M
.
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
:206
-213
←
1
2
→