SELECTIVE AREA GROWTH OF HIGH-QUALITY GAAS BY OMCVD USING NATIVE OXIDE MASKS

被引：26

作者：

JONES, SH

LAU, KM

机构：

[1] Univ of Massachusetts, Amherst, MA,, USA, Univ of Massachusetts, Amherst, MA, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 12期

关键词：

D O I：

10.1149/1.2100360

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3149 / 3155

页数：7

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[10] SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE [J].

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