MOSFET - MEMORY CIRCUITS

[11] BREWER DE, 1967, NOV AFIPS FALL JOINT, P381

[12] BURNS JR, 1964, RCA REV, V25, P627

[13] BURNS JR, 1969, NOV AFIPS FALL JOINT, P469

[14] BURNS JR, TO BE PUBLISHED

[15] BURNS JR, 1969, Patent No. 3457435

[16] IGFET CIRCUIT PERFORMANCE - N-CHANNEL VERSUS P-CHANNEL [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (05) : 267 - +

[17] COHEN L, 1967, NEREM REC, P170

[18] THEORY AND DESIGN OF MOS CAPACITOR PULL-UP CIRCUITS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (03) : 145 - &

[19] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, P71

[20] Dennard R. H., 1968, United States Patent, Patent No. [3387286, 3,387,286]

[11] BREWER DE, 1967, NOV AFIPS FALL JOINT, P381

[12] BURNS JR, 1964, RCA REV, V25, P627

[13] BURNS JR, 1969, NOV AFIPS FALL JOINT, P469

[14] BURNS JR, TO BE PUBLISHED

[15] BURNS JR, 1969, Patent No. 3457435

[16] IGFET CIRCUIT PERFORMANCE - N-CHANNEL VERSUS P-CHANNEL [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (05) : 267 - +

[17] COHEN L, 1967, NEREM REC, P170

[18] THEORY AND DESIGN OF MOS CAPACITOR PULL-UP CIRCUITS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (03) : 145 - &

[19] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, P71

[20] Dennard R. H., 1968, United States Patent, Patent No. [3387286, 3,387,286]