REAL-TIME CONTROL OF HGCDTE GROWTH BY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING SPECTROSCOPIC ELLIPSOMETRY

被引：9

作者：

MURTHY, SD ^{[1
]}

BHAT, I ^{[1
]}

JOHS, B ^{[1
]}

PITTAL, S ^{[1
]}

HE, P ^{[1
]}

机构：

[1] JA WOOLLAM CO,LINCOLN,NE 68508

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 09期

关键词：

HGCDTE; IN-SITU MONITORING; REAL-TIME CONTROL; SPECTROSCOPIC ELLIPSOMETRY;

D O I：

10.1007/BF02653057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of spectroscopic ellipsometry for monitoring the vapor phase epitaxial growth of mercury cadmium telluride (Hg1-xCdxTe) in real-time is demonstrated. The ellipsometer is used to perform system identification of the chemical vapor deposition reactor used for the growth of CdTe and to measure the response of the reactor to different growth conditions. The dynamic behavior of the reactor is also studied by evaluating the gas transport delay. The optical constants of Hg1-xCdxTe are determined at the growth temperature for different compositions. In-situ real-time composition control is performed during the growth of Hg1-xCdxTe. The required target compositions are attained by the ellipsometer and appropriate corrections are also made by the controller when a noise input in the form of a temperature variation is introduced.

引用

页码：1087 / 1091

页数：5

共 10 条

[1] OPTICAL CONTROL OF GROWTH OF ALXGA1-XAS BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY [J].