PROPERTIES OF CLUSTERED INTERSTITIALS IN ION-IMPLANTED SILICON - COMPARISON BETWEEN A MONTE-CARLO SIMULATION AND X-RAY-DIFFRACTION MEASUREMENTS

被引：3

作者：

MAZZONE, AM

SERVIDORI, M

机构：

[1] Centro Nazionale Ricerche-Istituto, Lab Materiali e Componenti, Elettronica, Bologna, Italy, Centro Nazionale Ricerche-Istituto Lab Materiali e Componenti Elettronica, Bologna, Italy

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1988年 / 57卷 / 02期

关键词：

D O I：

10.1080/09500838808229615

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：85 / 90

页数：6

共 18 条

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