CHARACTERIZATION OF LATTICE DAMAGE IN ION-IMPLANTED SILICON BY MULTIPLE CRYSTAL X-RAY-DIFFRACTION

被引：48

作者：

SERVIDORI, M

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80087-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：443 / 449

页数：7

共 19 条

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