MECHANISMS OF DOPANT IMPURITY DIFFUSION IN SILICON

被引：137

作者：

NICHOLS, CS

VAN DE WALLE, CG

PANTELIDES, ST

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.40.5484

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5484 / 5496

页数：13

共 42 条

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