CHARACTERISTIC LENGTHS FOR STEADY-STATE TRANSPORT IN ILLUMINATED, INTRINSIC A-SI-H

被引：13

作者：

HUBIN, J

SAUVAIN, E

SHAH, AV

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期

关键词：

D O I：

10.1109/16.40939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2789 / 2797

页数：9

共 14 条

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[7] DIFFUSION LENGTH MEASUREMENTS IN A-SI-H USING THE STEADY-STATE PHOTOCARRIER GRATING TECHNIQUE [J].

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WEISER, K .

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[8] AMBIPOLAR TRANSPORT IN AMORPHOUS-SEMICONDUCTORS IN THE LIFETIME AND RELAXATION-TIME REGIMES INVESTIGATED BY THE STEADY-STATE PHOTOCARRIER GRATING TECHNIQUE [J].

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