AMBIPOLAR TRANSPORT IN AMORPHOUS-SEMICONDUCTORS IN THE RELAXATION REGIME

被引：8

作者：

RITTER, D ^{[1
]}

ZELDOV, E ^{[1
]}

WEISER, K ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,IL-32000 HAIFA,ISRAEL

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90145-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：619 / 622

页数：4

共 15 条

[1]

DOEHLER GH, 1973, PHYS REV LETT, V30, P12000

[2]

DOEHLER GH, 1975, PHYS REV B, V12, P641

[3] TRANSPORT IN RELAXATION SEMICONDUCTORS [J].

KIESS, H ;

ROSE, A .

PHYSICAL REVIEW LETTERS, 1973, 31 (03) :153-154

[4]

MOORE AR, 1984, SEMICONDUCTORS SEM C, V21

[5] MINORITY-CARRIER INJECTION INTO RELAXATION SEMICONDUCTORS [J].

MOREAU, Y ;

MANIFACIER, JC ;

HENISCH, HK .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) :2904-2909

[6]

POPESCO C, 1975, PHYS REV B, V17, P3972

[7] STEADY-STATE PHOTOCARRIER GRATING TECHNIQUE FOR DIFFUSION LENGTH MEASUREMENT IN PHOTOCONDUCTIVE INSULATORS [J].

RITTER, D ;

ZELDOV, E ;

WEISER, K .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :791-793

[8] AMBIPOLAR DRIFT-LENGTH MEASUREMENT IN AMORPHOUS HYDROGENATED SILICON USING THE STEADY-STATE PHOTOCARRIER GRATING TECHNIQUE [J].

RITTER, D ;

WEISER, K .

PHYSICAL REVIEW B, 1986, 34 (12) :9031-9033

[9]

RITTER D, IN PRESS J APPL PHYS

[10]

RITTER D, UNPUB

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