DOPANT REDISTRIBUTION DURING OXIDATION OF SIGE

被引：22

作者：

LEGOUES, FK

ROSENBERG, R

MEYERSON, BS

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 08期

关键词：

D O I：

10.1063/1.100882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：751 / 753

页数：3

共 8 条

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[3] NOVEL OXIDATION PROCESS IN GE+-IMPLANTED SI AND ITS EFFECT ON OXIDATION-KINETICS [J].

HOLLAND, OW ;

WHITE, CW ;

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[4] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

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[5] OXIDATION STUDIES OF SIGE [J].

LEGOUES, FK ;

ROSENBERG, R ;

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HIMPSEL, F ;

MEYERSON, BS .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1724-1728

[6]

LEGOUES FK, 1989, APPL PHYS LETT, V54, P13

[7]

LEGOUES FK, 1988, MATER RES SOC S P, V105, P313

[8] ANOMALOUS CO-DIFFUSION EFFECTS OF GERMANIUM ON GROUP-III AND GROUP-V DOPANTS IN SILICON [J].

PFIESTER, JR ;

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APPLIED PHYSICS LETTERS, 1988, 52 (06) :471-473

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