EVIDENCE OF ZERO POTENTIAL SPIKE ENERGY IN ALGAAS GAAS HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS

被引：6

作者：

CHEN, HR ^{[1
]}

LEE, CP ^{[1
]}

CHANG, CY ^{[1
]}

TSAI, KL ^{[1
]}

TSANG, JS ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV, INST ELECTR, HSINCHU, TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 10A期

关键词：

HEBT; POTENTIAL SPIKE; BAND BENDING; OFFSET VOLTAGE;

D O I：

10.1143/JJAP.32.L1397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The potential spike energy at the emitter junction of AlGaAs/GaAs heterostructure emitter bipolar transistors (HEBT) was directly measured for the first time. Experimental data revealed that emitter thickness as thin as 300 angstrom is thick enough to eliminate potential spike without compositional grading. It is found that the band bending in n-GaAs reduces the potential spike and hence very low offset voltage of 70 mV with high current gain of 150 can be obtained.

引用

页码：L1397 / L1399

页数：3

共 8 条

[1] COLLECTOR-EMITTER OFFSET VOLTAGE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].