COLLECTOR OFFSET VOLTAGE OF HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY

被引：55

作者：

WON, T

IYER, S

AGARWALA, S

MORKOC, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 06期

关键词：

D O I：

10.1109/55.31744

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：274 / 276

页数：3

共 8 条

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[7] A HIGH-GAIN GAAS/ALGAAS N-P-N HETEROJUNCTION BIPOLAR-TRANSISTOR ON (100) SI GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[8] IN0.52AL0.48AS/IN0.53GA0.47AS DOUBLE-HETEROJUNCTION P-N-P BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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