IN0.52AL0.48AS/IN0.53GA0.47AS DOUBLE-HETEROJUNCTION P-N-P BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

WON, T

PENG, CK

CHYI, J

MORKOC, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 07期

关键词：

D O I：

10.1109/55.735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：334 / 336

页数：3

共 13 条

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[7] A HIGH-PERFORMANCE INGAAS/INALAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR WITH NONALLOYED N+-INAS CAP LAYER ON INP(N) GROWN BY MOLECULAR-BEAM EPITAXY [J].

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LITTON, CW ;

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IEEE ELECTRON DEVICE LETTERS, 1988, 9 (07) :331-333

[8] A FULLY PLANAR P-N-P HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

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[9] OPTIMIZING N-P-N AND P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS FOR SPEED [J].

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