SPATIALLY INDIRECT PHOTOLUMINESCENCE FROM INAS/ALSB HETEROSTRUCTURES

被引：10

作者：

FUCHS, F ^{[1
]}

SCHMITZ, J ^{[1
]}

RALSTON, JD ^{[1
]}

KOIDL, P ^{[1
]}

HEITZ, R ^{[1
]}

HOFFMANN, A ^{[1
]}

机构：

[1] TU BERLIN,INST FESTKORPERPHYS,D-10623 BERLIN,GERMANY

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1994年 / 16卷 / 01期

关键词：

D O I：

10.1006/spmi.1994.1105

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a Fourier transform photoluminescence study of InAs/AlSb type II heterostructures, spanning the mid infrared 1 mu m - 12 mu m wavelength range. The investigated samples consist of single-, double-, and multi-quantum wells, grown on GaAs substrates by molecular beam epitaxy, with different buffer layer structures for strain accommodation. The photoluminescence intensity is found to be very sensitive to the detailed structure of the underlying buffer sequence. Calorimetric measurements of the absorbance at 500 mK shows the weak spatially indirect transitions superimposed onto the spatially direct absorbance. Very wide quantum wells (100 nm and 200 nm) exhibit spatially direct as well as spatially indirect photoluminescence. Polarization resolved photoluminescence of the spatially indirect transitions allow the contributions of the normal (AlSb on InAs) and the inverted(InAs on AlSb) interface to be separated.

引用

页码：35 / 40

页数：6

共 25 条

[1] PHOTOLUMINESCENCE FROM NARROW INAS-ALSB QUANTUM-WELLS [J].