THE SULFUR-PASSIVATED INP SURFACE

被引：13

作者：

SUNDARARAMAN, CS

POULIN, S

CURRIE, JF

LEONELLI, R

机构：

[1] ECOLE POLYTECH,DEPT GENIE PHYS,MODFAB,MONTREAL H3C 3A7,QUEBEC,CANADA

[2] UNIV MONTREAL,DEPT PHYS,COUCHES MINCES GRP,MONTREAL H3C 3J7,QUEBEC,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1991年 / 69卷 / 3-4期

关键词：

D O I：

10.1139/p91-055

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The passivation of the InP surface by sulfur treatment is studied in the temperature range between 150-300-degrees-C by angle resolved X-ray photoelectron spectroscopy and photoluminescence measurements. The thermal sulfurization results in a 30 angstrom (1 angstrom = 10(-10) m) overlayer of In2S3 and P2O5. This cap layer lowers the phosphorus escape rate from the substrate thereby reducing the defects associated with phosphorus vacancies.

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页码：329 / 332

页数：4

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