MAGNETRON SPUTTER EPITAXY OF SIMGEN/SI(001) STRAINED-LAYER SUPERLATTICES

被引：33

作者：

SUTTER, P ^{[1
]}

SCHWARZ, C ^{[1
]}

MULLER, E ^{[1
]}

ZELEZNY, V ^{[1
]}

GONCALVESCONTO, S ^{[1
]}

VONKANEL, H ^{[1
]}

机构：

[1] ACAD SCI CZECH REPUBL,INST PHYS,PRAGUE,CZECH REPUBLIC

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 17期

关键词：

D O I：

10.1063/1.112766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of SimGen/Si(001) strained-layer superlattices by magnetron sputter epitaxy is reported. Films of excellent crystal quality resulted from low-temperature sputter growth at T-s=350 degrees C, as is evidenced by Rutherford backscattering spectrometry minimum channeling yields chi min=3% The absence of relaxation was demonstrated by Raman spectroscopy. Raman results on the first-order longitudinal-optical Ge-Ge phonon proved pure Ge to be present in a Si30Ge6 superlattice, which indicates an interface broadening of the order of 2 monolayers. High resolution transmission electron microscopy confirmed the formation of smooth and well-defined interfaces between subsequent Si and Ge layers. (C) American Institute of Physics.

引用

页码：2220 / 2222

页数：3

共 22 条

[1] GROWTH OF HIGH-QUALITY EPITAXIAL GE FILMS ON (100) SI BY SPUTTER DEPOSITION [J].