DELTA-DOPED MESFET WITH MBE-GROWN SI

[1] PHASE-SEPARATION AND LAYER SEQUENCE REVERSAL DURING SILICIDE FORMATION WITH NI-CR ALLOYS AND NI-CR BILAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 914 - 919

[2] BECK A, 1984, THESIS U BUNDESWEHR

[3] BECK A, 1985, J VACUUM SCI TECHN A, V2, P5

[4] SCHUBERT EF, 1985, JPN J APPL PHYS, V24, P608

[5] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1015 - 1027

[6] SHARP PROFILES AND LOW-TEMPERATURE DIFFUSION OF GA AND SB IN SILICON MODULATION-DOPED SUPERLATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 752 - 756

[7] TEMPEL G, 1987, J PHYS PARIS S, V11, P259

[8] GROWTH AND CHARACTERIZATION OF A DELTA-FUNCTION DOPING LAYER IN SI [J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1164 - 1166

[1] PHASE-SEPARATION AND LAYER SEQUENCE REVERSAL DURING SILICIDE FORMATION WITH NI-CR ALLOYS AND NI-CR BILAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 914 - 919

[2] BECK A, 1984, THESIS U BUNDESWEHR

[3] BECK A, 1985, J VACUUM SCI TECHN A, V2, P5

[4] SCHUBERT EF, 1985, JPN J APPL PHYS, V24, P608

[5] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1015 - 1027

[6] SHARP PROFILES AND LOW-TEMPERATURE DIFFUSION OF GA AND SB IN SILICON MODULATION-DOPED SUPERLATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 752 - 756

[7] TEMPEL G, 1987, J PHYS PARIS S, V11, P259

[8] GROWTH AND CHARACTERIZATION OF A DELTA-FUNCTION DOPING LAYER IN SI [J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1164 - 1166