PHASE-SEPARATION AND LAYER SEQUENCE REVERSAL DURING SILICIDE FORMATION WITH NI-CR ALLOYS AND NI-CR BILAYERS

被引:28
作者
APPELBAUM, A [1 ]
EIZENBERG, M [1 ]
BRENER, R [1 ]
机构
[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
关键词
D O I
10.1063/1.333143
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:914 / 919
页数:6
相关论文
共 17 条
[1]   DIFFUSION IN INTERMETALLIC COMPOUNDS WITH THE CAF2 STRUCTURE - A MARKER STUDY OF THE FORMATION OF NISI2 THIN-FILMS [J].
DHEURLE, F ;
PETERSSON, S ;
STOLT, L ;
STRIZKER, B .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5678-5681
[2]   FORMATION OF SHALLOW SILICIDE CONTACTS OF HIGH SCHOTTKY-BARRIER ON SI - ALLOYING PD AND PT WITH W VS ALLOYING PD AND PT WITH SI [J].
EIZENBERG, M ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1577-1585
[3]  
Gladyshevsky E I, 1963, RUSS J INORG CHEM, V8, P997
[4]   METALLURGICAL AND ELECTRICAL-PROPERTIES OF CHROMIUM SILICON INTERFACES [J].
MARTINEZ, A ;
ESTEVE, D ;
GUIVARCH, A ;
AUVRAY, P ;
HENOC, P ;
PELOUS, G .
SOLID-STATE ELECTRONICS, 1980, 23 (01) :55-64
[5]   SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS [J].
MAYER, JW ;
LAU, SS ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5855-5859
[6]   REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].
MURARKA, SP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792
[7]   BILAYER SILICIDE FORMATION DURING THE INTERACTION OF THIN CHROMIUM, NICKEL AND PLATINUM FILMS WITH SILICON [J].
NAUDE, MO ;
PRETORIUS, R ;
MARAIS, DJ .
THIN SOLID FILMS, 1982, 89 (04) :339-348
[8]   FORMATION KINETICS OF CRSI2 FILMS ON SI SUBSTRATES WITH AND WITHOUT INTERPOSED PD2SI LAYER [J].
OLOWOLAFE, JO ;
NICOLET, MA ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5182-5186
[9]   CONTACT REACTION BETWEEN SI AND PD-W ALLOY-FILMS [J].
OLOWOLAFE, JO ;
TU, KN ;
ANGILELLO, J .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6316-6320
[10]   PHASE-SEPARATION IN ALLOY-SI INTERACTION [J].
OTTAVIANI, G ;
TU, KN ;
MAYER, JW ;
TSAUR, BY .
APPLIED PHYSICS LETTERS, 1980, 36 (04) :331-333