METALLURGICAL AND ELECTRICAL-PROPERTIES OF CHROMIUM SILICON INTERFACES

被引：45

作者：

MARTINEZ, A

ESTEVE, D

GUIVARCH, A

AUVRAY, P

HENOC, P

PELOUS, G

机构：

[1] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE

[2] LAB AUTOMAT & ANAL SYST,F-31400 TOULOUSE,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 01期

关键词：

D O I：

10.1016/0038-1101(80)90168-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：55 / 64

页数：10

共 22 条

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[7]

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[8] REACTION-KINETICS OF MOLYBDENUM THIN-FILMS ON SILICON(111) SURFACE [J].

GUIVARCH, A ;

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MARTINEZ, A .

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[10] THERMIONIC EMISSION [J].

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