METALLURGICAL AND ELECTRICAL-PROPERTIES OF CHROMIUM SILICON INTERFACES

被引：45

作者：

MARTINEZ, A

ESTEVE, D

GUIVARCH, A

AUVRAY, P

HENOC, P

PELOUS, G

机构：

[1] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE

[2] LAB AUTOMAT & ANAL SYST,F-31400 TOULOUSE,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 01期

关键词：

D O I：

10.1016/0038-1101(80)90168-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：55 / 64

页数：10

共 22 条

[11] EVALUATION OF GLANCING ANGLE X-RAY-DIFFRACTION AND MEV HE-4 BACKSCATTERING ANALYSES OF SILICIDE FORMATION [J].

LAU, SS ;

CHU, WK ;

MAYER, JW ;

TU, KN .

THIN SOLID FILMS, 1974, 23 (02) :205-213

[12] IRON SILICIDE THIN-FILM FORMATION AT LOW-TEMPERATURES [J].

LAU, SS ;

FENG, JSY ;

OLOWOLAFE, JO ;

NICOLET, MA .

THIN SOLID FILMS, 1975, 25 (02) :415-422

[13]

LOCKER L, 1973, J APPL PHYS, V44, P436

[14]

MARTINEZ A, 1976, THESIS TOULOUSE

[15]

OLOWOLAFE JC, 1976, J APPL PHYS, V47, P5186

[16] DEPENDENCE OF BARRIER HEIGHT OF METAL SEMICONDUCTOR CONTACT (AU-GAAS) ON THICKNESS OF SEMICONDUCTOR SURFACE-LAYER [J].

PRUNIAUX, BR ;

ADAMS, AC .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1980-&

[17]

Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359

[18]

TU KN, 1975, APPL PHYS LETT, V27, P221, DOI 10.1063/1.88436

[19]

van Gurp G J, 1977, SEMICONDUCTOR SILICO, P342

[20] 1ST PHASE NUCLEATION IN SILICON-TRANSITION-METAL PLANAR INTERFACES [J].

WALSER, RM ;

BENE, RW .

APPLIED PHYSICS LETTERS, 1976, 28 (10) :624-625

← 1 2 3 →