FORMATION KINETICS OF CRSI2 FILMS ON SI SUBSTRATES WITH AND WITHOUT INTERPOSED PD2SI LAYER

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[3] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[4] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2831 - 2836

[5] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 507 - +

[6] KINETICS OF SILICIDE FORMATION BY THIN-FILMS OF V ON SI AND SIO2 SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3304 - 3308

[7] EVALUATION OF GLANCING ANGLE X-RAY-DIFFRACTION AND MEV HE-4 BACKSCATTERING ANALYSES OF SILICIDE FORMATION [J]. THIN SOLID FILMS, 1974, 23 (02) : 205 - 213

[8] ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 86 - 93

[9] OLOWOLAFE JO, TO BE PUBLISHED

[10] RUSH WVT, 1968, SOLID STATE ELECTRON, V11, P517

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[3] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[4] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2831 - 2836

[5] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 507 - +

[6] KINETICS OF SILICIDE FORMATION BY THIN-FILMS OF V ON SI AND SIO2 SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3304 - 3308

[7] EVALUATION OF GLANCING ANGLE X-RAY-DIFFRACTION AND MEV HE-4 BACKSCATTERING ANALYSES OF SILICIDE FORMATION [J]. THIN SOLID FILMS, 1974, 23 (02) : 205 - 213

[8] ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 86 - 93

[9] OLOWOLAFE JO, TO BE PUBLISHED

[10] RUSH WVT, 1968, SOLID STATE ELECTRON, V11, P517