GROWTH AND CHARACTERIZATION OF A DELTA-FUNCTION DOPING LAYER IN SI

被引：116

作者：

ZEINDL, HP

WEGEHAUPT, T

EISELE, I

OPPOLZER, H

REISINGER, H

TEMPEL, G

KOCH, F

机构：

[1] SIEMENS AG,FORSCHUNGSLAB,MUNICH,FED REP GER

[2] TECH UNIV MUNICH,DEPT PHYS,D-8046 GARCHING,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期

关键词：

D O I：

10.1063/1.97950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1164 / 1166

页数：3

共 9 条

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