HOMOEPITAXIAL GROWTH OF INP ON (111)B SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

InP has been homoepitaxially grown on both exactly (111)B oriented and misoriented substrates by gas-source molecular beam epitaxy The optimal growth condition for obtaining a mirrorlike surface was found to be a substrate misorientation of 0.5-degrees-1-degrees toward [110], a substrate temperature of 470-degrees-C, and a V/III incorporation ratio close to unity. The unity V/III ratio was established readily by monitoring the specular beam intensity of reflection high-energy electron diffraction when the phosphorus beam was modulated, similar to migration enhanced epitaxy. The InP epilayers with specular surfaces are of high quality as characterized by x-ray diffraction, Hall measurements, and low-temperature photoluminescence.