CALCULATED EFFICIENCIES OF PRACTICAL GAAS AND SI SOLAR CELLS INCLUDING EFFECT OF BUILT-IN ELECTRIC FIELDS

[1] ARCHER RJ, 1966, GALLIUM ARSENIDE P R, P109

[2] OPTICAL MICROPROBE RESPONSE OF GAAS DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (08) : 129 - &

[3] DIFFUSION LENGTHS OF ELECTRONS AND HOLES IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 685 - &

[4] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[5] THIN SILICON SOLAR CELLS FOR LARGE FLEXIBLE ARRAYS [J]. NATURE, 1967, 213 (5082) : 1223 - &

[6] CRABB RL, 1967, SCI IND SPECIALES, V11

[7] SPECTRAL RESPONSE OF SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1377 - &

[8] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[9] NEW VALUE FOR SOLAR CONSTANT OF RADIATION [J]. NATURE, 1968, 218 (5138) : 259 - &

[10] Gobat AR, 1962, IRE T MIL ELECTRON, V6, P20, DOI DOI 10.1109/IRET-MIL.1962.5008393

[1] ARCHER RJ, 1966, GALLIUM ARSENIDE P R, P109

[2] OPTICAL MICROPROBE RESPONSE OF GAAS DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (08) : 129 - &

[3] DIFFUSION LENGTHS OF ELECTRONS AND HOLES IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 685 - &

[4] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[5] THIN SILICON SOLAR CELLS FOR LARGE FLEXIBLE ARRAYS [J]. NATURE, 1967, 213 (5082) : 1223 - &

[6] CRABB RL, 1967, SCI IND SPECIALES, V11

[7] SPECTRAL RESPONSE OF SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1377 - &

[8] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[9] NEW VALUE FOR SOLAR CONSTANT OF RADIATION [J]. NATURE, 1968, 218 (5138) : 259 - &

[10] Gobat AR, 1962, IRE T MIL ELECTRON, V6, P20, DOI DOI 10.1109/IRET-MIL.1962.5008393