HEAVY-ION BACKSCATTERING SPECTROMETRY (HIBS) FOR HIGH-SENSITIVITY SURFACE IMPURITY DETECTION

被引:23
作者
KNAPP, JA
DOYLE, BL
机构
[1] Sandia National Laboratories, Division 1111, Albuquerque
关键词
D O I
10.1016/0168-583X(90)90804-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We describe a medium-energy heavy-ion beam (400 keV C+) technique for backscattering analyses of heavy trace elements on the surface of light substrates. Pulse pileup problems are eliminated by placing a thin (40 μg/cm2), self-supporting C foil in front of the surface barrier detector. In the present example the thickness is selected to range out the ions scattered from a Si substrate, while passing ions scattered from heavier impurities. Using this technique, called heavy-ion backscattering spectrometry (HIBS), we show that sensitivities for impurity elements heavier than Ar on a Si substrate are as high as 1010 atoms/cm2 for Au to 5 × 1011 atoms/cm2 for Fe. © 1990.
引用
收藏
页码:143 / 146
页数:4
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