NUCLEAR MICROANALYSIS USING MEV CARBON ION BACKSCATTERING - USEFULNESS AND APPLICATIONS

被引：19

作者：

ABEL, F ^{[1
]}

AMSEL, G ^{[1
]}

BRUNEAUX, M ^{[1
]}

COHEN, C ^{[1
]}

MAUREL, B ^{[1
]}

RIGO, S ^{[1
]}

ROUSSEL, J ^{[1
]}

机构：

[1] ECOLE NORM SUPER,GRP PHYS SOLIDES,TOUR 23,11 QUAI ST BERNARD,75005 PARIS,FRANCE

来源：

JOURNAL OF RADIOANALYTICAL CHEMISTRY | 1973年 / 16卷 / 02期

关键词：

D O I：

10.1007/BF02514187

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：587 / 603

页数：17

共 19 条

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[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1969, 311 (1504): : 35 - &
[7] BOSSHARD R, 1966, ONDE ELECTRIQUE, V472, P803
[8] INFLUENCE OF N-TYPE DOPANTS ON LATTICE LOCATION OF IMPLANTED P-TYPE DOPANTS IN SI AND GE
ERIKSSON, L
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[J]. APPLIED PHYSICS LETTERS, 1969, 14 (06) : 195 - +
[9] CHANNELING IN IRON AND LATTICE LOCATION OF IMPLANTED XENON
FELDMAN, LC
MURNICK, DE
[J]. PHYSICAL REVIEW B, 1972, 5 (01): : 1 - &
[10] LATTICE-LOCATION STUDIES OF TL,PB AND BI IN IRON, AND HYPERFINE FIELD AT PB IN IRON
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